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Ka-band pHEMT MMIC VCO with wide tuning range SCIE SCOPUS

Title
Ka-band pHEMT MMIC VCO with wide tuning range
Authors
Ryu, SKim, HYim, JIm, KKim, YHan, STKim, B
Date Issued
2003-11-20
Publisher
JOHN WILEY & SONS INC
Abstract
A Ka-bond MMIC VCO utilizing 0.15-mum T-gate GaAs P-HEMT technology is presented. The VCO exhibits a low-phase noise property with wide tuning range of up to 3 GHz. A balanced buffer amplifier is also developed to ensure that the output power is higher than 10 dBm. The best measured phase noise at 1 MHz offset is - 106 dBc/Hz. By varying the bias voltage of the on-chip varactor, the frequency can be continuously tuned from 33.3 to 36.3 GHz. In this frequency range, output power higher than 10 dBm has been measured without using the buffer amplifier. The buffer amplifier exhibits a typical gain of 5 dB with 15-dBm output power. A Lange coupler provides good matching between the VCO and the amplifier. (C) 2003 Wiley Periodicals, Inc.
Keywords
wide tuning range; millimeter-wave VCO; P-HEMT technology
URI
https://oasis.postech.ac.kr/handle/2014.oak/18288
DOI
10.1002/MOP.11206
ISSN
0895-2477
Article Type
Article
Citation
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 39, no. 4, page. 333 - 336, 2003-11-20
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김범만KIM, BUM MAN
Dept of Electrical Enginrg
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