Lead-free layered perovskite film capacitor for ferroelectric random access memory
SCIE
SCOPUS
- Title
- Lead-free layered perovskite film capacitor for ferroelectric random access memory
- Authors
- Chon, U; Shim, JS; Jang, HM
- Date Issued
- 2003-01
- Publisher
- TRANS TECH PUBLICATIONS LTD
- Abstract
- Lead-free Bi3.15Sm0.85Ti3O12 (BSmT) thin films were grown on Pt/TiO2/SiO2/Si(100) substrates using the method of metal-organic sol decomposition. The BSmT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2P(r)) and the nonvolatile charge as compared to those of the Bi4-xLaxTi3O12 (BLT; x=0.75) film capacitor, recently known as the most promising candidate for nonvolatile memories. 2P(r) value of the BSmT capacitor was 52 muC/cm(2) at an applied voltage of 12 V while the net nonvolatile switching charge was as high as 20 muC/cm(2) and remained essentially constant up to 4.5x10(10) read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 17 muC/cm(2) and a strong resistance against the imprinting failure.
- Keywords
- lead-free; samarium; layered perovskite film; FRAM; ferroelectric capacitor; BI3.25LA0.75TI3O12 THIN-FILMS; BISMUTH TITANATE; ELECTRICAL-PROPERTIES; FATIGUE; PT/TI/SIO2/SI(100); HETEROSTRUCTURES; RETENTION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18185
- DOI
- 10.4028/www.scientific.net/MSF.439.1
- ISSN
- 0255-5476
- Article Type
- Article
- Citation
- MATERIALS SCIENCE FORUM, vol. 439, page. 1 - 6, 2003-01
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- There are no files associated with this item.
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