Microstructures of pulsed laser deposited Eu doped Y2O3 luminescent films on Si(001) substrates
SCIE
SCOPUS
- Title
- Microstructures of pulsed laser deposited Eu doped Y2O3 luminescent films on Si(001) substrates
- Authors
- Kim, SS; Moon, JH; Lee, BT; Sohn, KS; Kang, TS; Je, JH
- Date Issued
- 2004-01-15
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- Europium doped yttrium oxide (Y2O3:Eu) luminescent thin films were grown on Si(0 0 1) substrates using a pulsed laser deposition technique and their microstructures and growth behavior were investigated by synchrotron X-ray scattering and atomic force microscopy. We observed that the surface morphology of the Y2O3:Eu films was very smooth with typically a 0.5-nm root mean square roughness for the films up to 750 run in thickness and the film strain increased gradually with film thickness. suggesting that the Y2O3:Eu films are grown with a layer-like growth mode. Grown with the (I 1 1) preferred orientation. the Y2O3:Eu films significantly improved in crystallinity with film thickness, showing a characteristic red luminescence Of Y2O3:Eu materials. (C) 2003 Elsevier B.V. All rights reserved.
- Keywords
- growth mechanism; pulsed laser deposition; X-ray diffraction; atomic force microscopy; luminescence; YTTRIUM-OXIDE FILMS; THIN-FILMS; EPITAXIAL-GROWTH; ENHANCEMENT
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18175
- DOI
- 10.1016/S0169-4332(03)00882-1
- ISSN
- 0169-4332
- Article Type
- Article
- Citation
- APPLIED SURFACE SCIENCE, vol. 221, no. 1-4, page. 231 - 236, 2004-01-15
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