P-type conductivity in bulk AlxGa1-xN and AlxGa1-xN/AlyGa1-yN superlattices with average Al mole fraction > 20%
SCIE
SCOPUS
- Title
- P-type conductivity in bulk AlxGa1-xN and AlxGa1-xN/AlyGa1-yN superlattices with average Al mole fraction > 20%
- Authors
- Kim, JK; Waldron, EL; Li, YL; Gessmann, T; Schubert, EF; Jang, HW; Lee, JL
- Date Issued
- 2004-04-26
- Publisher
- AMER INST PHYSICS
- Abstract
- Synchrotron radiation photoemission spectroscopy reveals enhanced oxygen incorporation in AlxGa1-xN as the Al mole fraction increases. It is shown that the increased oxygen donor incorporation can result in a conductivity-type change from p-type to n-type in Mg-doped AlxGa1-xN. Consistent with the conductivity-type change, epitaxial Al0.20Ga0.80N films exhibit n-type conductivity despite heavy Mg doping. The p-type conductivity of bulk AlxGa1-xN with a high Al mole fraction can be improved by employing AlxGa1-xN/AlyGa1-yN superlattices (SLs). At 300 K, Mg-doped Al0.17Ga0.83N/Al0.36Ga0.64N SLs (average Al mole fraction of 23%) exhibit strong p-type conductivity with a specific resistance of 4.6 Omega cm, a hole mobility of 18.8 cm(2)/Vs, and an acceptor activation energy of 195 meV. (C) 2004 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17973
- DOI
- 10.1063/1.1728322
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 84, no. 17, page. 3310 - 3312, 2004-04-26
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