Analysis of Abnormal Upturns in Capacitance-Voltage Characteristics for MOS Devices With High-k Dielectrics
SCIE
SCOPUS
- Title
- Analysis of Abnormal Upturns in Capacitance-Voltage Characteristics for MOS Devices With High-k Dielectrics
- Authors
- Sohn, CW; Sagong, HC; Jeong, EY; Choi, DY; Park, MS; Lee, JS; Kang, CY; Jammy, R; Jeong, YH
- Date Issued
- 2011-04
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- In this letter, we analyze the nonsaturating upturns of capacitance under strong accumulation bias in MOS capacitors with high-k dielectrics. By comparing the electrical properties of dielectric samples with and without HfO(2) and by varying the ambient temperature, it is found that the conduction through the shallow trap levels in the HfO(2) bulk produces not only a steady-state current but also a dynamic current, which, in turn, causes the upturn in capacitance. The addition of RC shunts to the conventional small-signal model is proposed to consider the dynamic leakage effect. The model's effectiveness is verified by fitting the measured impedance spectrum and the measured capacitance. We suggest that measuring at a high frequency of hundreds of megahertz eliminates the dynamic interaction by shallow trap levels, allowing gate capacitance to be successfully reconstructed.
- Keywords
- Capacitance measurement; dynamic response; equivalent circuits; hafnium oxide; high-k dielectrics; radio-frequency measurement; shallow trap level; upturns; EXTRACTION; HF
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17493
- DOI
- 10.1109/LED.2011.2108257
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 32, no. 4, page. 434 - 436, 2011-04
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.