Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs
SCIE
SCOPUS
- Title
- Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs
- Authors
- Kim, D; Lee, S; Oh, TK; Cha, SY; Hong, SJ; Kang, B
- Date Issued
- 2011-06
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- This paper proposes an electrical method of extracting mechanical stress in n-MOSFETs and analyzes the influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation (SOG-filled STI). The proposed method requires only the maximum transconductance g(m.max) and measured subthreshold current I-d(sub.), eliminating the effect of deviations of the mobility mu and effective channel length L-eff that occurred in a previous method using mu. In addition, it eliminates the measurement error due to the drain induced barrier lowering (DIBL) effect in a previous method using I-d(sub.). The tensile stress sigma(t) in the experimental n-MOSFETs was measured as several hundred mega Pascals. An increase of separation distance d between dummy active regions and the Si active region resulted in a decrease of sigma(t) for d > 0.2 mu m. But, sigma(t) decreased when d decreased from 0.2 to 0.09 mu m. (c) 2010 Elsevier B.V. All rights reserved.
- Keywords
- Mechanical stress; Shallow trench isolation (STI); Dummy active patterns; Subthreshold current; Drain induced barrier lowering (DIBL); ENHANCEMENT
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17487
- DOI
- 10.1016/J.MEE.2010.11.036
- ISSN
- 0167-9317
- Article Type
- Article
- Citation
- MICROELECTRONIC ENGINEERING, vol. 88, no. 6, page. 882 - 887, 2011-06
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