H-Aggregation Strategy in the Design of Molecular Semiconductors for Highly Reliable Organic Thin Film Transistors
SCIE
SCOPUS
- Title
- H-Aggregation Strategy in the Design of Molecular Semiconductors for Highly Reliable Organic Thin Film Transistors
- Authors
- Kim, SO; An, TK; Chen, J; Kang, I; Kang, SH; Chung, DS; Park, CE; Kim, YH; Kwon, SK
- Date Issued
- 2011-05-10
- Publisher
- WILEY-BLACKWELL
- Abstract
- Four new quaterthiophene derivatives with end-groups composed of dicyclohexyl ethyl (DCE4T), dicyclohexyl butyl (DCB4T), cyclohexyl ethyl (CE4T), and cyclohexyl butyl (CB4T) were designed. All materials showed high solubility in common organic solvents. UV-vis absorption measurements showed that the quaterthiophene derivatives with asymmetrically substituted cyclohexyl end-groups (CE4T and CB4T) preferred H-type aggregation whereas those with symmetrically substituted cyclohexyl end-groups (DCE4T and DCB4T) preferred J-type aggregation. The molecular structure-dependent packing (H or J) of the new quaterthiophene derivatives was analyzed by grazing-incidence wide-angle X-ray scattering (GIWAXS) measurements. The field-effect mobilities of devices that incorporated the asymmetrical molecules, CE4T and CB4T, were quite high, above 10(-2) cm (2) V-1 s(-1), due to H-aggregation, whereas the fi eld-effect mobilities of devices that incorporated symmetrical molecules, DCE4T and DCB4T, were poor, below 10(-4) cm (2) V-1 s(-1), due to J-aggregation. More importantly, H-aggregation within the thin fi lm provided stable crystalline morphologies in the spin-coated fi lms, and, thus, thin fi lm transistors (TFTs) using cyclohexylated quaterthiophenes yielded highly reproducible transistor performances. The distributions of measured fi eld-effect mobilities in transistors based on cyclohexylated quaterthiophenes with H-aggregation were remarkably narrow.
- Keywords
- FIELD-EFFECT TRANSISTORS; X-RAY-SCATTERING; OLIGOFLUORENE-THIOPHENE DERIVATIVES; HIGH-PERFORMANCE SEMICONDUCTORS; SELF-ASSEMBLED MONOLAYER; END-CAPPED OLIGOMERS; TRANSPORT-PROPERTIES; CRYSTAL-STRUCTURE; EFFECT MOBILITY; SIDE-CHAIN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17395
- DOI
- 10.1002/ADFM.201002367
- ISSN
- 1616-301X
- Article Type
- Article
- Citation
- ADVANCED FUNCTIONAL MATERIALS, vol. 21, no. 9, page. 1616 - 1623, 2011-05-10
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