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H-Aggregation Strategy in the Design of Molecular Semiconductors for Highly Reliable Organic Thin Film Transistors SCIE SCOPUS

Title
H-Aggregation Strategy in the Design of Molecular Semiconductors for Highly Reliable Organic Thin Film Transistors
Authors
Kim, SOAn, TKChen, JKang, IKang, SHChung, DSPark, CEKim, YHKwon, SK
Date Issued
2011-05-10
Publisher
WILEY-BLACKWELL
Abstract
Four new quaterthiophene derivatives with end-groups composed of dicyclohexyl ethyl (DCE4T), dicyclohexyl butyl (DCB4T), cyclohexyl ethyl (CE4T), and cyclohexyl butyl (CB4T) were designed. All materials showed high solubility in common organic solvents. UV-vis absorption measurements showed that the quaterthiophene derivatives with asymmetrically substituted cyclohexyl end-groups (CE4T and CB4T) preferred H-type aggregation whereas those with symmetrically substituted cyclohexyl end-groups (DCE4T and DCB4T) preferred J-type aggregation. The molecular structure-dependent packing (H or J) of the new quaterthiophene derivatives was analyzed by grazing-incidence wide-angle X-ray scattering (GIWAXS) measurements. The field-effect mobilities of devices that incorporated the asymmetrical molecules, CE4T and CB4T, were quite high, above 10(-2) cm (2) V-1 s(-1), due to H-aggregation, whereas the fi eld-effect mobilities of devices that incorporated symmetrical molecules, DCE4T and DCB4T, were poor, below 10(-4) cm (2) V-1 s(-1), due to J-aggregation. More importantly, H-aggregation within the thin fi lm provided stable crystalline morphologies in the spin-coated fi lms, and, thus, thin fi lm transistors (TFTs) using cyclohexylated quaterthiophenes yielded highly reproducible transistor performances. The distributions of measured fi eld-effect mobilities in transistors based on cyclohexylated quaterthiophenes with H-aggregation were remarkably narrow.
Keywords
FIELD-EFFECT TRANSISTORS; X-RAY-SCATTERING; OLIGOFLUORENE-THIOPHENE DERIVATIVES; HIGH-PERFORMANCE SEMICONDUCTORS; SELF-ASSEMBLED MONOLAYER; END-CAPPED OLIGOMERS; TRANSPORT-PROPERTIES; CRYSTAL-STRUCTURE; EFFECT MOBILITY; SIDE-CHAIN
URI
https://oasis.postech.ac.kr/handle/2014.oak/17395
DOI
10.1002/ADFM.201002367
ISSN
1616-301X
Article Type
Article
Citation
ADVANCED FUNCTIONAL MATERIALS, vol. 21, no. 9, page. 1616 - 1623, 2011-05-10
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박찬언PARK, CHAN EON
Dept. of Chemical Enginrg
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