Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics
SCIE
SCOPUS
- Title
- Silicon nanowire ion sensitive field effect transistor with integrated Ag/AgCl electrode: pH sensing and noise characteristics
- Authors
- Kim, S; Rim, T; Kim, K; Lee, U; Baek, E; Lee, H; Baek, CK; Meyyappan, M; Deen, MJ; Lee, JS
- Date Issued
- 2011-01
- Publisher
- Royal society of chemistry
- Abstract
- We have fabricated Si nanowire (SiNW) based ion-sensitive field effect transistors (ISFETs) for biosensing applications. The ability to prepare a large number of sensors on a wafer, the use of standard silicon microfabrication techniques resulting in cost savings, and potential high sensitivity are significant advantages in favor of nanoscale SiNW ISFETs. The SiNW ISFETs with embedded Ag/AgCl reference electrode were fabricated on a standard silicon-on-insulator wafer using electron-beam lithography and conventional semiconductor processing technology. The current-voltage characteristics show an n-type FET behavior with a relatively high on/off current ratio, reasonable subthreshold swing value, and low gate-leakage current. The pH responses of the ISFETs with different pH solutions were characterized at room temperature which showed a clear lateral shift of the drain current vs. gate voltage curve with a change in the pH value of the solution and a sensitivity of 40 mV pH(-1). The low frequency noise characteristics were investigated to evaluate the signal to noise ratio and sensing limit of the devices.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/17049
- DOI
- 10.1039/C1AN15568G
- ISSN
- 0003-2654
- Article Type
- Article
- Citation
- ANALYST, vol. 136, no. 23, page. 5012 - 5016, 2011-01
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