Design of a Polymer-Carbon Nanohybrid Junction by Interface Modeling for Efficient Printed Transistors
SCIE
SCOPUS
- Title
- Design of a Polymer-Carbon Nanohybrid Junction by Interface Modeling for Efficient Printed Transistors
- Authors
- Kim, DH; Shin, HJ; Lee, HS; Lee, J; Lee, BL; Lee, WH; Lee, JH; Cho, K; Kim, WJ; Lee, SY; Choi, JY; Kim, JM
- Date Issued
- 2012-01
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Molecularly hybridized materials composed of polymer semiconductors (PSCs) and single-walled carbon nanotubes (SWNTs) may provide a new way to exploit an advantageous combination of semiconductors, which yields electrical properties that are not available In a single-component system. We demonstrate for the first time high-performance inkjet-printed hybrid thin film transistors with an electrically engineered heterostructure by using specially designed PSCs and semiconducting SWNTs (sc-SWNTs) whose system achieved a high mobility of 0.23 cm(2) V-1 s(-1), no V. shift, and a low off-current. PSCs were designed by calculation of the density of states of the backbone structure, which was related to charge transfer. The sc-SWNTs were prepared by a single cascade of the density-induced separation method. We also revealed that the binding energy between PSCs and sc-SWNTs was strongly affected by the side-chain length of PSCs, leading to the formation of a homogeneous nanohybrid film. The understanding of electrostatic interactions In the heterostructure and experimental results suggests criteria for the design of nanohybrid heterostructures.
- Keywords
- polymer-carbon nanohybrid; printed transistors; electrostatic interaction; density of state; binding energy; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; AUGMENTED-WAVE METHOD; HIGH-MOBILITY; BASIS-SET; NANOTUBES; COMPOSITES; SEPARATION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16646
- DOI
- 10.1021/NN2041472
- ISSN
- 1936-0851
- Article Type
- Article
- Citation
- ACS NANO, vol. 6, no. 1, page. 662 - 670, 2012-01
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