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Cited 13 time in webofscience Cited 10 time in scopus
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Nonvolatile Resistive Memory Device Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications SCIE SCOPUS

Title
Nonvolatile Resistive Memory Device Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications
Authors
Jungmoo Lee,Kim, O
Date Issued
2011-06
Publisher
JSAP
Abstract
In this paper, a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) thin-film memory device with both top and bottom indium tin oxide (ITO) electrodes was fabricated and the feasibility of this device was verified. The device showed a bipolar switching property. A write-read-erase-read memory cycle test and a data retention test were performed under ambient conditions. The turn on/off process occurred owing to the reduction and oxidation mechanism of the PEDOT chain, and each interface influenced the on and off voltages. Lastly, the switching characteristic of the flexible memory device was investigated. (C) 2011 The Japan Society of Applied Physics
Keywords
POLYMER; CELLS
URI
https://oasis.postech.ac.kr/handle/2014.oak/16556
DOI
10.1143/JJAP.50.06GF01
ISSN
0021-4922
Article Type
Article
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 50, no. 6, page. 6GF01, 2011-06
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김오현KIM, OHYUN
Dept of Electrical Enginrg
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