Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
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SCOPUS
- Title
- Simplified Model of the Effect of Source/Drain Doping Gradient on Capacitance and Resistance in a Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
- Authors
- Daehyun Moon; Jaejun Song; Kim, O
- Date Issued
- 2011-06
- Publisher
- JSAP
- Abstract
- Simplified models of capacitance and resistance in the external region are presented and the mobility enhancement effect is verified for extremely scaled and undoped double-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with the raised source/drain and self-aligned silicide structure and different source/drain doping gradients. The accuracy and universality of these models were confirmed using a two-dimensional simulator. Results indicated that a 3 nm increment of the source/drain lateral doping straggle can reduce the intrinsic delay by about 30% and the leakage current by about 95%. (C) 2011 The Japan Society of Applied Physics
- Keywords
- FRINGE CAPACITANCE; INVERSION LAYER; UNDERLAP; OPTIMIZATION; MOBILITY; DEVICES; MOSFETS; DGMOS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16540
- DOI
- 10.1143/JJAP.50.06GF16
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 50, no. 6, page. 6GF16, 2011-06
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