Investigation of low-frequency noise behavior after hot-carrier stress in an n-channel junctionless nanowire MOSFET
SCIE
SCOPUS
- Title
- Investigation of low-frequency noise behavior after hot-carrier stress in an n-channel junctionless nanowire MOSFET
- Authors
- Park, CH; Ko, MD; Kim, KH; Lee, SH; Yoon, JS; Lee, JS; Jeong, YH
- Date Issued
- 2012-11
- Publisher
- IEEE
- Abstract
- The dc performance and low-frequency (LF) noise behaviors after hot-carrier (HC)-induced stress were compared for a junctionless nanowire transistor (JNT) and an inversion-mode nanowire transistor (INT). Less dc degradation was found in the JNT than in the INT. Due to the low lateral peak electric field (E-field) and electrons traveling through the center of the nanowire, the LF noise increment after HC-induced stress in the JNT is much lower than that in the INT. Furthermore, due to the higher lateral peak E-field located under the gate and the conduction path that occurs near the surface, the LF noise of the INT is very sensitive to HC stress.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16267
- DOI
- 10.1109/LED.2012.2213575
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 33, no. 11, page. 1538 - 1540, 2012-11
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