A novel bias circuit with temperature and process compensation for RFIC
SCIE
SCOPUS
- Title
- A novel bias circuit with temperature and process compensation for RFIC
- Authors
- Jeongcheol Lee; Youngwoong Kim; Jinho Shin; Kim, B
- Date Issued
- 2012-12
- Publisher
- JOHN WILEY & SONS INC
- Abstract
- Temperature and process variations have become key issues in design of integrated circuits using deep submicron technologies.In the RF front-end circuitry, these characteristics must be compensated to maintain acceptable performance across all process corners and throughout the temperature variations. This article proposes a new bias circuit technique to compensate the variations by adding a single NMOS to the normally bias circuit. A 2.4GHz and 5.2GHz LNAs with the proposed bias circuit have the power gain variation (S21) of only 0.3 dB for the -40 to 85 degrees C temperature range in a 65nm RF CMOS process. (c) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:26942697, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27170
- Keywords
- PTAT bias; bias circuit; WLAN LNA; RFIC; DESIGN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16183
- DOI
- 10.1002/MOP.27170
- ISSN
- 0895-2477
- Article Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 54, no. 12, page. 2694 - 2697, 2012-12
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