Carbon Quantum Dot-Based Field-Effect Transistors and Their Ligand Length-Dependent Carrier Mobility
SCIE
SCOPUS
- Title
- Carbon Quantum Dot-Based Field-Effect Transistors and Their Ligand Length-Dependent Carrier Mobility
- Authors
- Woosung Kwon; Sungan Do; Dong Chan Won; Rhee, SW
- Date Issued
- 2013-02-13
- Publisher
- AMER CHEMICAL SOC
- Abstract
- We report electrical measurements of films of carbon quantum dots (CQDs) that serve as the channels of field-effects transistors (FETs). To investigate the dependence of the field-effect mobility on ligand length, colloidal CQDs are synthesized and ligand-exchanged with several primary amines of different ligand lengths. We measure current as a function of gate voltage and find that the devices show ambipolar conductivity, with electron and hole mobilities as high as 8.49 X 10(-5) and 3.88 X 10(-5) cm(2) V-1 s(-1) respectively. The electron mobilities are consistently 2-4 times larger than the hole mobilities. Furthermore, the mobilities decrease exponentially with the increase of the ligand length, which is well-described by the Miller-Abrahams model for nearest-neighbor hopping. Our results provide a theoretical basis to examine charge transport in CQD films and offer new prospects for the fabrication of high-mobility CQD-based optoelectronic devices, including solar cells, light-emitting devices, and optical sensors.
- Keywords
- carbon quantum dots; mobility; ligand exchange; ligand length; emulsion template; field-effect transistors; ONE-STEP SYNTHESIS; MOLECULAR JUNCTIONS; NANOCRYSTALS; NANOPARTICLES; GRAPHITE; SOLIDS; PHOTOLUMINESCENCE; NANODOTS; FILMS; SOOT
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/16048
- DOI
- 10.1021/AM3023898
- ISSN
- 1944-8244
- Article Type
- Article
- Citation
- ACS Applied Materials & Interfaces, vol. 5, no. 3, page. 822 - 827, 2013-02-13
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.