Operation Voltage Control in Complementary Resistive Switches Using Heterodevice

Abstract

For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfOx-based ReRAM with a TiOx-based ReRAM. To control the operation voltages of the CRS device, we used ReRAMs having asymmetric set and reset voltages. Consequently, we achieved a wider voltage window for the read process, high switch speed, high reliability, and more than ten times readout margin from the heterodevice CRS.