High Current Density and Nonlinearity Combination of Selection Device Based on TaOX/TiO2/TaOX Structure for One Selector-One Resistor Arrays

Abstract

We demonstrate a high-performance selection device by utilizing the concept of crested oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaOx,/TiO2/TaOx structure, high current density over 10(7) A cm(-2) and excellent non-linear characteristics up to 10(4) were successfully demonstrated. On the basis of the defect chemistry and SIMS depth profile result, we found that some Ta atoms gradually diffused into TiO2 film, and consequently, the energy band of the TiO2 film was symmetrically bent at the top and bottom TaOx/TiO2 interfaces and modified as a crested oxide barrier. Furthermore, the one selector-one resistor device exhibited significant suppression of the leakage current, indicating excellent selector characteristics.