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Selective epitaxial growth of Si1-xGex films via the alternating gas supply of Si2H6, GeH4, and Cl-2: Effects of Cl-2 exposure SCIE SCOPUS
- Title
- Selective epitaxial growth of Si1-xGex films via the alternating gas supply of Si2H6, GeH4, and Cl-2: Effects of Cl-2 exposure
- Date Issued
- 2012-12-15
- Publisher
- ELSEVIER SCIENCE BV
- ISSN
- 0167-577X
- Article Type
- Article
- Citation
- MATERIALS LETTERS, vol. 89, page. 354 - 355, 2012-12-15
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