Impurity-controlled Mo films as diffusion barriers for Cu metallization
SCIE
SCOPUS
KCI
- Title
- Impurity-controlled Mo films as diffusion barriers for Cu metallization
- Authors
- Gu, GH; Park, SM; Park, CG
- Date Issued
- 2012-06
- Publisher
- HANRIMWON PUBLISHING CO,.
- Abstract
- Effects of vacuum conditions on the oxygen content and microstructure of Mo layers used with Cu gate lines as thin-film transistor-liquid crystal display diffusion barriers were investigated. Mo was deposited using ion-beam sputtering at 1.0 x 10(-5) and 7.0 x 10(-7) Torr. The Mo layer oxygen content and the microstructure and changes in chemical composition of the Cu/Mo/SiO2/Si layer during annealing were examined. The Mo layer microstructure was influenced by oxygen; increasing concentration increased the energy required for secondary grain growth. Growth was suppressed at high oxygen levels. Therefore, diffusion barrier performance is enhanced by finer Mo layer grain sizes.
- Keywords
- thin films; crystal growth; diffusion; crystal structure; transmission electron microscopy (TEM); THIN-FILMS; COPPER; OXIDATION; AL; SI; RELIABILITY; METALS; TA
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15777
- DOI
- 10.1007/S12540-012-3021-3
- ISSN
- 1598-9623
- Article Type
- Article
- Citation
- METALS AND MATERIALS INTERNATIONAL, vol. 18, no. 3, page. 517 - 520, 2012-06
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