Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors
SCIE
SCOPUS
- Title
- Highly stable fluorine-rich polymer treated dielectric surface for the preparation of solution-processed organic field-effect transistors
- Authors
- Jiye Kim; Se Hyun Kim; Tae Kyu An; Seonuk Park; Park, CE
- Date Issued
- 2013-01
- Publisher
- ROYAL SOC CHEM
- Abstract
- Highly stable fluorine-rich polymer dielectrics were fabricated using cross-linked poly(3-(hexafluoro-2-hydroxyl) propyl) styrene (PFS), which shows excellent electrical stability, good adhesive surface properties, and good wettability on deposited solution-processed materials. Solution-processed triethylsilylethynyl anthradithiophene (TES-ADT) could be deposited onto the cross-linked PFS dielectrics to yield highly ordered crystalline structured films that did not delaminate. The field-effect mobilities were as high as 0.56 cm(2) V-1 s(-1), and negligible hysteresis was observed in the organic field-effect transistors (OFETs). The threshold voltage, the ON/OFF ratio, and the subthreshold slope were -0.043 V, similar to 10(7), and -0.3 V per decade, respectively. The OFETs demonstrated excellent device reliability under gate-bias stress conditions due to the presence of highly stable fluorine groups in the cross-linked PFS dielectrics.
- Keywords
- GATE-DIELECTRICS; HIGH-PERFORMANCE; PENTACENE; FACILE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15540
- DOI
- 10.1039/C2TC00280A
- ISSN
- 2050-7526
- Article Type
- Article
- Citation
- JOURAL OF MATERIALS CHEMISTRY C, vol. 1, no. 6, page. 1272 - 1278, 2013-01
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