Four-States Multiferroic Memory Embodied Using Mn-Doped BaTiO3 Nanorods
SCIE
SCOPUS
- Title
- Four-States Multiferroic Memory Embodied Using Mn-Doped BaTiO3 Nanorods
- Authors
- Jong Yeog Son; Jung-Hoon Lee; Seungwoo Song; Young-Han Shin; Jang, HM
- Date Issued
- 2013-06
- Publisher
- ACS
- Abstract
- Multiferroics that show simultaneous ferroic responses have received a great deal of attention by virtue of their potential for enabling new device paradigms. Here, we demonstrate a high-density four-states multiferroic memory using vertically aligned Mn-doped BaTiO3 nanorods prepared by applying the dip-pen nanolithography technique. In the present nanorods array, the polarization (P) switching by an external electric field does not influence the magnetization (M) of the nanorod owing to a negligible degree of the P M cross-coupling. Similarly, the magnetic-field-induced M switching Is unaffected by the ferroelectric polarization. On the basis of these, we are able to implement a four-states nonvolatile multiferroic memory, namely, (+P,+M), (+P,-M),(-P,+M), and (-P,-M) with the reliability in the P and M switching. Thus, the present work makes an important step toward the practical realization of multistate ferrolc memories.
- Keywords
- four-states memory; multiferroic memory; polarization-magnetization cross-coupling; Mn-doped BaTiO3 nanorods; piezoelectric force microscopy; magnetic force microscopy; STEP DECORATION; POLARIZATION; FERRITE; BIFEO3; FIELD
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15486
- DOI
- 10.1021/NN4017422
- ISSN
- 1936-0851
- Article Type
- Article
- Citation
- ACS Nano, vol. 7, no. 6, page. 5522 - 5529, 2013-06
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