Synthesis of a p-Type Semiconducting Phenothiazine Exfoliatable Layered Crystal
SCIE
SCOPUS
- Title
- Synthesis of a p-Type Semiconducting Phenothiazine Exfoliatable Layered Crystal
- Authors
- Lee, M; Park, JE; Park, C; Choi, HC
- Date Issued
- 2013-08-13
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Phenothiazine (PTZ) crystals are grown by a physical vapor transport method in a horizontal tube furnace. The resulting disk-type PTZ single crystals have a layered structure, which can be mechanically exfoliated into stacked individual layers to exhibit various colors depending on the thickness. The PTZ single-crystal field-effect transistor (FET) devices exhibit a p-type semiconducting property with 3.03 x 10(-6) S/cm electrical conductivity, 1.15 x 10(-4) cm(2)/(V s) carrier mobility, and a 10(4) on/off ratio.
- Keywords
- FIELD-EFFECT TRANSISTORS; SINGLE-CRYSTALS; THIN-FILMS; ANTHRACENE; POLYMERS; MOBILITY; GRAPHENE; GROWTH; PHASE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15216
- DOI
- 10.1021/LA401611V
- ISSN
- 0743-7463
- Article Type
- Article
- Citation
- LANGMUIR, vol. 29, no. 32, page. 9967 - 9971, 2013-08-13
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- There are no files associated with this item.
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