Polaronic Transport and Current Blockades in Epitaxial Silicide Nanowires and Nanowire Arrays
SCIE
SCOPUS
- Title
- Polaronic Transport and Current Blockades in Epitaxial Silicide Nanowires and Nanowire Arrays
- Authors
- Iancu, V; Zhang, XG; Kim, TH; Menard, LD; Kent, PRC; Woodson, ME; Ramsey, JM; Li, AP; Weitering, HH
- Date Issued
- 2013-08
- Publisher
- American Chemical Society
- Abstract
- Crystalline micrometer-long YSi2 nanowires with cross sections as small as 1 x 0.5 nm can be grown on the Si(001) surface. Their extreme aspect ratios make electron conduction within these nanowires almost ideally one-dimensional, while their compatibility with the silicon platform suggests application as metallic interconnect in Si-based nanoelectronic devices. Here we combine bottom-up epitaxial wire synthesis in ultrahigh vacuum with top-down miniaturization of the electrical measurement probes to elucidate the electronic conduction mechanism of both individual wires and arrays of nanowires. Temperature-dependent transport through individual nanowires is indicative of thermally assisted tunneling of small polarons between atomic-scale defect centers. In-depth analysis of complex wire networks emphasize significant electronic crosstalk between the nanowires due to the long-range Coulomb fields associated with polaronic charge fluctuations. This work establishes a semiquantitative correlation between the density and distributions of atomic-scale defects and resulting current-voltage characteristics of nanoscale network devices.
- Keywords
- suicide nanowires; one-dimensional conductance; self-assembly; scanning tunneling microscopy; polarons; TEMPERATURE-DEPENDENCE; SI(001); SURFACE; ELECTRON; STATE; WIRES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/15155
- DOI
- 10.1021/NL401574C
- ISSN
- 1530-6984
- Article Type
- Article
- Citation
- NANO LETTERS, vol. 13, no. 8, page. 3684 - 3689, 2013-08
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- There are no files associated with this item.
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