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3D Compositional Characterization of Si/SiO2 Vertical Interface Structure by Atom Probe Tomography

Title
3D Compositional Characterization of Si/SiO2 Vertical Interface Structure by Atom Probe Tomography
Authors
Lee, JHKim, YTKim, JJLee, SYPark, CG
POSTECH Authors
Park, CG
Date Issued
Nov-2013
Publisher
Electronic Mater. Letters
Keywords
atom probe; shallow trench isolation; transition layer; local magnification effect; SPECTROSCOPY; SILICON
URI
http://oasis.postech.ac.kr/handle/2014.oak/14982
DOI
10.1007/S13391-013-6002-X
ISSN
1738-8090
Article Type
Article
Citation
ELECTRONIC MATERIALS LETTERS, vol. 9, no. 6, page. 747 - 750, 2013-11
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박찬경PARK, CHAN GYUNG
Dept of Materials Science & Enginrg
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