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3D Compositional Characterization of Si/SiO2 Vertical Interface Structure by Atom Probe Tomography
- Title
- 3D Compositional Characterization of Si/SiO2 Vertical Interface Structure by Atom Probe Tomography
- POSTECH Authors
- Park, CG
- Date Issued
- Nov-2013
- Publisher
- Electronic Mater. Letters
- Keywords
- atom probe; shallow trench isolation; transition layer; local magnification effect; SPECTROSCOPY; SILICON
- ISSN
- 1738-8090
- Article Type
- Article
- Citation
- ELECTRONIC MATERIALS LETTERS, vol. 9, no. 6, page. 747 - 750, 2013-11
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Related Researcher
- 박찬경PARK, CHAN GYUNG
- Dept of Materials Science & Enginrg