Threshold-Switching Characteristics of a Nanothin-NbO2-layer-based Pt/NbO2/Pt stack for Use in Cross-point-type Resistive Memories

Abstract

We fabricated a nanothin-NbO2-layer-based Pt/NbO2/Pt stack and investigated its threshold-switching characteristics, which can be attributed to metal-insulator-transition, at the nanoscale. The Pt/NbO2/Pt device exhibited a high degree of stability at temperatures as high as 160 degrees C as well as excellent scalabilities both in terms of the active device area (diameter similar to 10 nm) and thickness (similar to 10 nm). In addition, the device also exhibited uniform switching behavior and high switching speeds (similar to 22 ns). These characteristics make the device suitable for use as a selection device in high density cross-point type structures for resistive switching memories (ReRAIVIs). (C) 2013 Elsevier B.V. All rights reserved.