Selector-less RRAM with non-linearity of device for cross-point array applications
SCIE
SCOPUS
- Title
- Selector-less RRAM with non-linearity of device for cross-point array applications
- Authors
- Woo, J; Lee, D; Choi, G; Cha, E; Kim, S; Lee, W; Park, S; Hwang, H
- Date Issued
- 2013-09
- Publisher
- Elsevier
- Abstract
- We achieved resistive switching characteristics with non-linearity for selector-less RRAM. The non-linear characteristic was obtained by controlling operation currents. The observed non-linearity in the low resistance state (LRS) can be explained by thermally-formed suboxide region under higher operation cur, rents. By using the non-linear characteristic, the RRAM device as one-resistor memory cell with TiOx/TiOy bi-layer structure is applicable to cross-point array without additional selector device for the suppression of sneak-path currents. (C) 2013 Elsevier B.V. All rights reserved.
- Keywords
- RRAM; Cross-point array; Selector; OXIDE FILMS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14932
- DOI
- 10.1016/J.MEE.2013.03.130
- ISSN
- 0167-9317
- Article Type
- Article
- Citation
- Microelectronic Engineering, vol. 109, page. 360 - 363, 2013-09
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