Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes
SCIE
SCOPUS
- Title
- Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes
- Authors
- Guan-Bo Lin; Dong-Yeong Kim; Qifeng Shan; Jaehee Cho; E. Fred Schubert; Hyunwook Shim; Cheolsoo Sone; Kim, JK
- Date Issued
- 2013-08
- Publisher
- IEEE
- Abstract
- The dependence of the polarization-induced electric field in GaInN/GaN multiple-quantum-well light-emitting diodes (LEDs) on the GaN quantum barrier (QB) thickness is investigated. Electrostatic arguments and simulations predict that a thin QB thickness reduces the electric field in the quantum wells (QWs) and also improves the LED efficiency. We experimentally demonstrate that the QW electric field decreases with decreasing QB thickness. The lower electric field results in a better overlap of electron and hole wave functions and better carrier confinement in the QWs. A reduced efficiency droop and enhanced internal quantum efficiency is demonstrated for GaInN/GaN LEDs when the QB thickness is reduced from 24.5 to 9.1 nm.
- Keywords
- Light emitting diode; gallium nitride; efficiency droop
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14643
- DOI
- 10.1109/JPHOT.2013.2276758
- ISSN
- 1943-0655
- Article Type
- Article
- Citation
- Photonics Journal, IEEE, vol. 5, no. 4, 2013-08
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- There are no files associated with this item.
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