Reduction of efficiency droop in GaInN/GaN Light-emitting diodes with thick AlGaN cladding layers
SCIE
SCOPUS
KCI
- Title
- Reduction of efficiency droop in GaInN/GaN Light-emitting diodes with thick AlGaN cladding layers
- Authors
- An Mao; Jaehee Cho; E. Fred Schubert; Joong Kon Son; Cheolsoo Sone; Woo Jin Ha; Sunyong Hwang; Kim, JK
- Date Issued
- 2012-02
- Publisher
- Korean Institute of Metals and Materials
- Abstract
- GaInN/GaN multiple-quantum-well light-emitting diodes (LEDs) with 0.4 mu m-thick AlGaN cladding layers and two quantum wells (QWs), designed for investigating the origin of efficiency droop, are demonstrated to have a lower efficiency droop than typical GaInN/GaN LEDs with 5 QWs. Considering the much less electron leakage over the active region, and the larger carrier density due to the smaller active volume of the LED with AlGaN cladding layers than those of the typical LED, it is suggested that the dominant mechanism responsible for the efficiency droop is electron leakage rather than the Auger recombination which scales with the cubic power of the carrier density.
- Keywords
- GaN; light-emitting diodes; efficiency droop; laser diode; BLUE LASER-DIODES; TEMPERATURE CHARACTERISTICS; QUANTUM EFFICIENCY; LEDS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14597
- DOI
- 10.1007/S13391-011-0780-9
- ISSN
- 1738-8090
- Article Type
- Article
- Citation
- Electronic Materials Letters, vol. 8, no. 1, page. 1 - 4, 2012-02
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.