Triangular-Pulse Measurement for Hysteresis of High-Performance and Flexible Graphene Field-Effect Transistors

Abstract

We use a triangular-pulse measurement technique to obtain the hysteretic electrical characteristics of flexible graphene field-effect transistors (GFETs). To minimize charge trapping, the gate-voltage scanning rate was controlled (up to 2 V/mu s) by varying the triangular-pulse rise and fall times. This method makes it possible to measure the intrinsic-like transfer characteristics of chemical vapor deposition graphene devices. The maximum electron (hole) mobility measured by a dc measurement is similar to 4800 (5200) cm(2)/Vs, whereas the maximum electron (hole) mobility measured by the triangular-pulse technique with a gate-voltage scanning rate of 0.4 V/mu s is similar to 10 600 (8500) cm(2)/Vs. For measurements with a triangular gate pulse, the shift of the Dirac voltage is less than that measured by the dc method. These results indicate that the triangular-gate-pulse measurement is a promising technique with which to determine the intrinsic properties and ambipolar transfer characteristics of GFETs.