Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment
SCIE
SCOPUS
- Title
- Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment
- Authors
- Yoon, YG; Kim, TK; Hwang, IC; Lee, HS; Hwang, BW; Moon, JM; Seo, YJ; Lee, SW; Jo, MH; Lee, SH
- Date Issued
- 2014-03-12
- Publisher
- American Chemical Society
- Abstract
- In this study, germanium nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited enhanced electrical performance with low source/drain (S/D) contact resistance under the influence of Ar plasma treatment on the contact regions. We found that the transformation of the surface oxide states by Ar plasma treatment affected the S/D contact resistance. With Ar plasma treatment, the germanium dioxide on the GeNW surface was effectively removed and increased oxygen vacancies were formed in the suboxide on the GeNW, whose germanium-enrichment surface was obtained to form a germanide contact at low temperature. After a rapid thermal annealing process, Ni-germanide contacts were formed on the Ar-plasma-treated GeNW surface. Ni-germanide contact resistance was improved by more than an order of magnitude compared to that of the other devices without Ni-germanide contact. Moreover, the peak field effect mobility value of the GeNW-JL MOSFETs was dramatically improved from 15 cm(2)/(V s) to 550 cm(2)/(V s), and the I-on/off ratio was enhanced from 1 x 10 to 3 x 10(3) due to Ar plasma treatment. The Ar plasma treatment process is essential for forming uniform Ni-germanide-contacts with reduced time and low temperature. It is also crucial for increasing mass productivity and lowering the thermal budget without sacrificing the performance of GeNW-JL MOSFETs.
- Keywords
- GeNW-JL; MOSFETs; Ar plasma treatment; GeO2; suboxide; germanide contact; ENERGY-LOSS SPECTROSCOPY; LIQUID-SOLID GROWTH; THERMAL-DESORPTION; SILICON; OXIDE; SURFACE; SUBSTRATE; TRANSISTORS; FUTURE; LAYERS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14520
- DOI
- 10.1021/AM403971X
- ISSN
- 1944-8244
- Article Type
- Article
- Citation
- ACS APPLIED MATERIALS & INTERFACES, vol. 6, no. 5, page. 3150 - 3155, 2014-03-12
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- There are no files associated with this item.
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