Wafer-Scale Patterning of Reduced Graphene Oxide Electrodes by Transfer-and-Reverse Stamping for High Performance OFETs
SCIE
SCOPUS
- Title
- Wafer-Scale Patterning of Reduced Graphene Oxide Electrodes by Transfer-and-Reverse Stamping for High Performance OFETs
- Authors
- Joong Suk Lee; Nam Hee Kim; Moon Sung Kang; Hojeong Yu; Dong Ryoul Lee; Oh, JH; Suk Tai Chang; Jeong Ho Cho
- Date Issued
- 2013-08-26
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Abstract
- A wafer-scale patterning method for solution-processed graphene electrodes, named the transfer-and-reverse stamping method, is universally applicable for fabricating source/drain electrodes of n- and p-type organic field-effect transistors with excellent performance. The patterning method begins with transferring a highly uniform reduced graphene oxide thin film, which is pre-prepared on a glass substrate, onto hydrophobic silanized (rigid/flexible) substrates. Patterns of the as-prepared reduced graphene oxide films are then formed by modulating the surface energy of the films and selectively delaminating the films using an oxygen-plasma-treated elastomeric stamp with patterns. Reduced graphene oxide patterns with various sizes and shapes can be readily formed onto an entire wafer. Also, they can serve as the source/drain electrodes for benchmark n- and p-type organic field-effect transistors with enhanced performance, compared to those using conventional metal electrodes. These results demonstrate the general utility of this technique. Furthermore, this simple, inexpensive, and scalable electrode-patterning-technique leads to assembling organic complementary circuits onto a flexible substrate successfully.
- Keywords
- reduced graphene oxide; micropatterning; thin films; source-drain electrodes; flexible inverters; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ORGANIC SEMICONDUCTORS; AQUEOUS DISPERSIONS; EFFECT MOBILITY; GRAPHITE OXIDE; TRANSPARENT; FABRICATION; DIELECTRICS; TRANSPORT
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14389
- DOI
- 10.1002/SMLL.201300538
- ISSN
- 1613-6810
- Article Type
- Article
- Citation
- SMALL, vol. 9, no. 16, page. 2817 - 2825, 2013-08-26
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