High-Performance Phototransistors Based on Single-Crystalline n-Channel Organic Nanowires and Photogenerated Charge-Carrier Behaviors
SCIE
SCOPUS
- Title
- High-Performance Phototransistors Based on Single-Crystalline n-Channel Organic Nanowires and Photogenerated Charge-Carrier Behaviors
- Authors
- Hojeong Yu; Zhenan Bao; Oh, JH
- Date Issued
- 2013-02-05
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Abstract
- The photoelectronic characteristics of single-crystalline nanowire organic phototransistors (NW-OPTs) are studied using a high-performance n-channel organic semiconductor, N,N-bis(2-phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide (BPE-PTCDI), as the photoactive layer. The optoelectronic performances of the NW-OPTs are analyzed by way of their currentvoltage (IV) characteristics on irradiation at different wavelengths, and comparison with corresponding thin-film organic phototransistors (OPTs). Significant enhancement in the charge-carrier mobility of NW-OPTs is observed upon light irradiation as compared with when performed in the dark. A mobility enhancement is observed when the incident optical power density increases and the wavelength of the light source matches the light-absorption range of the photoactive material. The photoswitching ratio is strongly dependent upon the incident optical power density, whereas the photoresponsivity is more dependent on matching the light-source wavelength with the maximum absorption range of the photoactive material. BPE-PTCDI NW-OPTs exhibit much higher external quantum efficiency (EQE) values (approximate to 7900 times larger) than thin-film OPTs, with a maximum EQE of 263 000%. This is attributed to the intrinsically defect-free single-crystalline nature of the BPE-PTCDI NWs. In addition, an approach is devised to analyze the charge-transport behaviors using charge accumulation/release rates from deep traps under on/off switching of external light sources.
- Keywords
- organic phototransistors; nanowires; thin-films; organic single-crystals; charge accumulation rates; charge release rates; FIELD-EFFECT TRANSISTORS; PHOTOCURRENT MULTIPLICATION; SOLAR-CELLS; FILM; PHOTOMULTIPLICATION; SEMICONDUCTOR
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14388
- DOI
- 10.1002/ADFM.201201848
- ISSN
- 1616-301X
- Article Type
- Article
- Citation
- ADVANCED FUNCTIONAL MATERIALS, vol. 23, no. 5, page. 629 - 639, 2013-02-05
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- There are no files associated with this item.
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