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Flexible FET-Type VEGF Aptasensor Based on Nitrogen-Doped Graphene Converted from Conducting Polymer SCIE SCOPUS

Title
Flexible FET-Type VEGF Aptasensor Based on Nitrogen-Doped Graphene Converted from Conducting Polymer
Authors
Oh Seok KwonSeon Joo ParkJin-Yong HongA-Reum HanJun Seop LeeLee, JSOh, JHJyongsik Jang
Date Issued
2012-02
Publisher
American Chemical Society
Abstract
Graphene-based field-effect transistors (FETs) have been developed rapidly and are currently considered as an alternative for postsilicon electronics. In this study, polypyrrole-converted nitrogen-doped few-layer graphene (PPy-NDFLG) was grown on Cu substrate by chemical vapor deposition combined with vapor deposition polymerization and then transferred onto a flexible substrate. Furthermore, antivascular endothelial growth factor (VEGF) RNA aptamer conjugated PPy-NDFLG was integrated Into a liquid-ion gated FET geometry to fabricate a high-performance VEGF aptamer-based sensor. Field-induced high sensitivity was observed for the analyte-binding events, eventually leading to the recognition of the target molecules at an unprecedentedly low concentration (100 fM). Additionally, the aptasensor had excellent reusability, mechanical bendability, and durability In the flexible process. The developed methodology describes, for the first time, the fabrication of N-doped graphene using conducting polymers including heteroatoms in their structures as the carbonization precursor and demonstrates its use in a high-performance, flexible FET-type aptasensor to detect vascular endothelial growth factor as a cancer biomarker.
Keywords
nitrogen-doped graphene; field-effect transistor; conducting polymer; aptasensor; vascular endothelial growth factor; aptamer; ENDOTHELIAL GROWTH-FACTOR; CHEMICAL-VAPOR-DEPOSITION; CARBON NANOTUBE; LAYER GRAPHENE; OXIDE; CANCER; TRANSISTORS; FABRICATION; SENSORS; IMMOBILIZATION
URI
https://oasis.postech.ac.kr/handle/2014.oak/14383
DOI
10.1021/NN204395N
ISSN
1936-0851
Article Type
Article
Citation
ACS NANO, vol. 6, no. 2, page. 1486 - 1493, 2012-02
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오준학OH, JOON HAK
Dept. of Chemical Enginrg
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