Complementary metal- oxide semiconductor Doherty power amplifier based on voltage combining method
SCIE
SCOPUS
- Title
- Complementary metal- oxide semiconductor Doherty power amplifier based on voltage combining method
- Authors
- Chenxi Zhao; Byungjoon Park; Kim, B
- Date Issued
- 2014-02-18
- Publisher
- Institute of Engineering and Technology
- Abstract
- A 1.75 GHz Doherty power amplifier (PA) is designed and implemented in a 0.18-mu m complementary metal-oxide semiconductor (CMOS) process. This Doherty PA uses a voltage combining transformer to combine the output power and realise the load modulation which is different from conventional current combining Doherty amplifiers. The prototype has a power-added efficiency (PAE) of 31.6% at a maximum output power of 28.6 dBm from 3.4 V supply voltage. The PAE at 6 dB back-off is still high, about 25%. It shows clearly the efficiency enhancement at the power back-off point because of the Doherty operation. This is the first use of voltage combining techniques in CMOS Doherty PA design.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14236
- DOI
- 10.1049/IET-MAP.2013.0241
- ISSN
- 1751-8725
- Article Type
- Article
- Citation
- IET MICROWAVES ANTENNAS & PROPAGATION, vol. 8, no. 3, page. 131 - 136, 2014-02-18
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.