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Complementary metal- oxide semiconductor Doherty power amplifier based on voltage combining method SCIE SCOPUS

Title
Complementary metal- oxide semiconductor Doherty power amplifier based on voltage combining method
Authors
Chenxi ZhaoByungjoon ParkKim, B
Date Issued
2014-02-18
Publisher
Institute of Engineering and Technology
Abstract
A 1.75 GHz Doherty power amplifier (PA) is designed and implemented in a 0.18-mu m complementary metal-oxide semiconductor (CMOS) process. This Doherty PA uses a voltage combining transformer to combine the output power and realise the load modulation which is different from conventional current combining Doherty amplifiers. The prototype has a power-added efficiency (PAE) of 31.6% at a maximum output power of 28.6 dBm from 3.4 V supply voltage. The PAE at 6 dB back-off is still high, about 25%. It shows clearly the efficiency enhancement at the power back-off point because of the Doherty operation. This is the first use of voltage combining techniques in CMOS Doherty PA design.
URI
https://oasis.postech.ac.kr/handle/2014.oak/14236
DOI
10.1049/IET-MAP.2013.0241
ISSN
1751-8725
Article Type
Article
Citation
IET MICROWAVES ANTENNAS & PROPAGATION, vol. 8, no. 3, page. 131 - 136, 2014-02-18
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김범만KIM, BUM MAN
Dept of Electrical Enginrg
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