Confinement of Ferroelectric Domain-Wall Motion at Artificially Formed Conducting-Nanofilaments in Epitaxial BiFeO3 Thin Films
SCIE
SCOPUS
- Title
- Confinement of Ferroelectric Domain-Wall Motion at Artificially Formed Conducting-Nanofilaments in Epitaxial BiFeO3 Thin Films
- Authors
- Kim, WH; Son, JY; Jane, HM
- Date Issued
- 2014-05-14
- Publisher
- AMER CHEMICAL SOC
- Abstract
- We report confinement of ferroelectric domain-wall motion at conducting-nanofilament wall in epitaxial BiFeO3 thin film on Nb-doped SrTiO3 substrate. The BiFeO3 film exhibited well-defined ferroelectric response and unipolar resistive switching behavior. We artificially formed conducting-nanofilaments in the BiFeO3 via conducting atomic force microscope techniques. The conducting-nanofilament wall, which does not possess any ferroelectric polarization, is then able to block domain propagation. Consequently, we demonstrate that the domain-wall motion is effectively confined within the conducting-nanofilament wall during polarization switching. This significant new insight potentially gives an opportunity for the artificial manipulation of nanoscale ferroelectric domain.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14152
- DOI
- 10.1021/AM501630K
- ISSN
- 1944-8244
- Article Type
- Article
- Citation
- ACS APPLIED MATERIALS & INTERFACES, vol. 6, no. 9, page. 6346 - 6350, 2014-05-14
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