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The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics SCIE SCOPUS
- Title
- The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
- Date Issued
- 2014-11-12
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- organic field-effect transistors; gate-bias stabilities; fluorinated polymers; SURFACE; CIRCUITS; MOBILITY; CHAIN
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 26, no. 42, page. 7241 - 7246, 2014-11-12
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Related Researcher
- 박찬언PARK, CHAN EON
- Dept. of Chemical Enginrg