The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
SCIE
SCOPUS
- Title
- The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
- Authors
- Kim, J; Jang, J; Kim, K; Kim, H; Kim, SH; Park, CE
- Date Issued
- 2014-11-12
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- organic field-effect transistors; gate-bias stabilities; fluorinated polymers; SURFACE; CIRCUITS; MOBILITY; CHAIN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14111
- DOI
- 10.1002/ADMA.201402363
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 26, no. 42, page. 7241 - 7246, 2014-11-12
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- There are no files associated with this item.
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