High-Performance Organic Complementary Inverters Using Monolayer Graphene Electrodes
SCIE
SCOPUS
- Title
- High-Performance Organic Complementary Inverters Using Monolayer Graphene Electrodes
- Authors
- Jeong, YJ; Jang, J; Nam, S; Kim, K; Kim, LH; Park, S; An, TK; Park, CE
- Date Issued
- 2014-05-14
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Chemical vapor deposition-grown graphene has been an attractive electrode material for organic electronic devices, such as organic field-effect transistors (OFETs), because it is highly conductive and provides good oxidation and thermal stability properties. However, it still remains a challenge to demonstrate organic complementary circuits using graphene electrodes because of the relatively poor performance of n-type OFETs. Here, we report the development of high-performance organic complementary inverters using graphene as source/drain electrodes and N, N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) and pentacene as n- and p-type organic semiconductors, respectively. Graphene electrodes were n-doped via the formation of NH2-terminated self-assembled monolayers that lowered the work function and the electron injection barrier between the graphene and PTCDI-C13. Thermal annealing improved the molecular packing among PTCDI-C13 groups on the graphene surface, thereby increasing the crystallinity and grain size. The thermally annealed PTCDI-C13 OFETs prepared using n-doped graphene electrodes exhibited a good field-effect mobility of up to 0.43 cm(2)/(V s), which was comparable to the values obtained from other p-type pentacene OFETs. By integrating p- and n-type OFETs, we successfully fabricated organic complementary inverters that exhibited highly symmetric operation with an excellent voltage gain of up to 124 and good noise margin.
- Keywords
- graphene; chemical vapor deposition; n-type organic semiconductors; organic complementary inverters; work function; thermal annealing; FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; GATE DIELECTRICS; HIGH-MOBILITY; CIRCUITS; SEMICONDUCTORS; POLYMER; FILMS; ENHANCEMENT; STABILITY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/14099
- DOI
- 10.1021/AM500618G
- ISSN
- 1944-8244
- Article Type
- Article
- Citation
- ACS APPLIED MATERIALS & INTERFACES, vol. 6, no. 9, page. 6816 - 6824, 2014-05-14
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