Highly Non-Linear Nitrogen Doped ZnO Based Selector Device for Cross-Point Array
SCIE
SCOPUS
- Title
- Highly Non-Linear Nitrogen Doped ZnO Based Selector Device for Cross-Point Array
- Authors
- Tamanna, N; Misha, SH; Prakash, A; Song, J; Lee, D; Woo, J; Park, J; Hwang, H
- Date Issued
- 2014-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- In this study, we demonstrate a systematic way to obtain a bidirectional selector for cross point Resistive Random Access Memory (ReRAM) application by engineering material's properties. The nitrogen doping can control carrier density and increase electrical resistivity of zinc oxide. By introducing nitrogen at the both ends of ZnO film, Pt/N-ZnO/ZnO/N-ZnO/Pt structure was fabricated which exhibits very stable selector characteristics. An intensive analysis was performed to analyse the effect of nitrogen percentage and the thickness of N-ZnO on selector characteristics. (C) 2014 The Electrochemical Society. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13862
- DOI
- 10.1149/2.0031411ssl
- ISSN
- 2162-8742
- Article Type
- Article
- Citation
- ECS SOLID STATE LETTERS, vol. 3, no. 11, page. P136 - P139, 2014-01
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