N-Doped Graphene Field-Effect Transistors with Enhanced Electron Mobility and Air-Stability
SCIE
SCOPUS
- Title
- N-Doped Graphene Field-Effect Transistors with Enhanced Electron Mobility and Air-Stability
- Authors
- Xu, W; Lim, TS; Seo, HK; Min, SY; Cho, H; Park, MH; Kim, YH; Lee, TW
- Date Issued
- 2014-05-28
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- Although graphene can be easily p-doped by various adsorbates, developing stable n-doped graphene that is very useful for practical device applications is a difficult challenge. We investigated the doping effect of solution-processed (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) on chemical-vapor-deposited (CVD) graphene. Strong n-type doping is confirmed by Raman spectroscopy and the electrical transport characteristics of graphene field-effect transistors. The strong n-type doping effect shifts the Dirac point to around -140 V. Appropriate annealing at a low temperature of 80 oC enables an enhanced electron mobility of 1150 cm(2) V-1 s(-1). The work function and its uniformity on a large scale (1.2 mm x 1.2 mm) of the doped surface are evaluated using ultraviolet photoelectron spectroscopy and Kelvin probe mapping. Stable electrical properties are observed in a device aged in air for more than one month.
- Keywords
- n-type doping; graphene field-effect transistor; carrier mobility; dirac point; MOLECULAR CHARGE-TRANSFER; LIGHT-EMITTING-DIODES; TRANSPARENT ELECTRODES; CARBON NANOTUBES; RECENT PROGRESS; LAYER GRAPHENE; WORK-FUNCTION; NANORIBBONS; GROWTH; FABRICATION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13840
- DOI
- 10.1002/SMLL.201303768
- ISSN
- 1613-6810
- Article Type
- Article
- Citation
- SMALL, vol. 10, no. 10, page. 1999 - 2005, 2014-05-28
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- There are no files associated with this item.
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