Transforming a surface state of a topological insulator by a Bi capping layer
SCIE
SCOPUS
- Title
- Transforming a surface state of a topological insulator by a Bi capping layer
- Authors
- Yeom, HW; Kim, SH; Shin, WJ; Jin, KH; Park, J; Kim, Tae-Hwan; Kim, JS; Ishikawa, H; Sakamoto, K; Jhi, SH
- Date Issued
- 2014-12-01
- Publisher
- American Physical Society
- Abstract
- We introduce a distinct approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13820
- DOI
- 10.1103/PHYSREVB.90.235401
- ISSN
- 1098-0121
- Article Type
- Article
- Citation
- PHYSICAL REVIEW B, vol. 90, no. 23, page. 235401, 2014-12-01
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