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Cited 4 time in webofscience Cited 4 time in scopus
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A Comparative Study of the DRAM Leakage Mechanism for Planar and Recessed Channel MOSFETs

Title
A Comparative Study of the DRAM Leakage Mechanism for Planar and Recessed Channel MOSFETs
Authors
Lee, MJBaek, CKPark, SChung, IYPark, YJ
POSTECH Authors
Baek, CK
Date Issued
Sep-2009
Publisher
Elsevier
Keywords
Dynamic random access memory (DRAM); Recessed channel array transistor (RCAT); Leakage current; CELL TRANSISTOR
URI
http://oasis.postech.ac.kr/handle/2014.oak/13715
DOI
10.1016/J.SSE.2009.04.011
ISSN
0038-1101
Article Type
Article
Citation
SOLID-STATE ELECTRONICS, vol. 53, no. 9, page. 998 - 1000, 2009-09
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백창기BAEK, CHANG KI
Dept. of Creative IT Engin.
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