A Comparative Study of the DRAM Leakage Mechanism for Planar and Recessed Channel MOSFETs
SCIE
SCOPUS
- Title
- A Comparative Study of the DRAM Leakage Mechanism for Planar and Recessed Channel MOSFETs
- Authors
- Lee, MJ; Baek, CK; Park, S; Chung, IY; Park, YJ
- Date Issued
- 2009-09
- Publisher
- Elsevier
- Abstract
- We have experimentally analyzed the leakage mechanism by comparing the planar DRAM cell and the recently developed DRAM cell transistors that have deeply recessed channels. We have identified important differences in the leakage mechanisms between planar MOSFETs and recessed channel MOSFETs, so we can suggest guidelines with respect to the optimal device structures for the recessed channel DRAM cell. (C) 2009 Elsevier Ltd. All rights reserved.
- Keywords
- Dynamic random access memory (DRAM); Recessed channel array transistor (RCAT); Leakage current; CELL TRANSISTOR
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13715
- DOI
- 10.1016/J.SSE.2009.04.011
- ISSN
- 0038-1101
- Article Type
- Article
- Citation
- SOLID-STATE ELECTRONICS, vol. 53, no. 9, page. 998 - 1000, 2009-09
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- There are no files associated with this item.
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