Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory
SCIE
SCOPUS
- Title
- Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory
- Authors
- Lee, D; Woo, J; Cha, E; Lee, S; Hwang, H
- Date Issued
- 2014-09
- Publisher
- Springer
- Abstract
- Accurate control of formation of conducting filaments is one of the most important challenges to solve in order to achieve improved switching characteristics in resistive random-access memory (ReRAM). In this regard, high-pressure hydrogen annealing (HPHA) can be an effective method for accurate control because it can induce in the ReRAM the formation of oxygen vacancies and OH- bonds, the main factors that influence conducting filament formation. Among the various switching processes, the forming process, which represents the first formation of a conducting filament, was investigated to clarify the effects of HPHA on the formation of conducting filaments. HPHA-treated samples were found to exhibit more accurately controlled resistance of the conducting filament, owing to accurate control of the forming process, compared with samples not treated by HPHA.
- Keywords
- ReRAM; conducting filament; high-pressure hydrogen annealing; filament overformation; TECHNOLOGY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13589
- DOI
- 10.1007/S11664-014-3265-4
- ISSN
- 0361-5235
- Article Type
- Article
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, vol. 43, no. 9, page. 3635 - 3639, 2014-09
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.