Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory
SCIE
SCOPUS
- Title
- Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory
- Authors
- Lee, D; Park, J; Park, J; Woo, J; Cha, E; Lee, S; Moon, K; Song, J; Koo, Y; Hwang, H
- Date Issued
- 2015-01
- Publisher
- Wiley-VCH Verlag
- Keywords
- NONVOLATILE MEMORY; PERFORMANCE; TRANSITION; NANOCROSSBAR; MECHANISM; ENDURANCE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13585
- DOI
- 10.1002/ADMA.201403675
- ISSN
- 0935-9648
- Article Type
- Article
- Citation
- ADVANCED MATERIALS, vol. 27, no. 1, page. 59 - 64, 2015-01
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.