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Cited 18 time in webofscience Cited 20 time in scopus
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A Repeatable Epitaxial Lift-Off Process from a Single GaAs Substrate for Low-Cost and High-Efficiency III-V Solar Cells

Title
A Repeatable Epitaxial Lift-Off Process from a Single GaAs Substrate for Low-Cost and High-Efficiency III-V Solar Cells
Authors
Choi, WKim, CZKim, CSHeo, WJoo, TRyu, SYKim, HKim, HKang, HKJo, S
POSTECH Authors
Joo, T
Date Issued
Nov-2014
Publisher
Wiley
Keywords
ENHANCED DEFECT REACTIONS; GALLIUM-ARSENIDE; SI; DIFFUSION; JUNCTION; GROWTH; ZINC; PHOTOVOLTAICS; LAYERS; REUSE
URI
http://oasis.postech.ac.kr/handle/2014.oak/13582
DOI
10.1002/AENM.201400589
ISSN
1614-6840
Article Type
Article
Citation
ADVANCED ENERGY MATERIALS, vol. 4, no. 16, page. 1400589, 2014-11
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주태하JOO, TAIHA
Dept of Chemistry
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