Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures
SCIE
SCOPUS
- Title
- Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures
- Authors
- Lee, D; Woo, J; Park, S; Cha, E; Lee, S; Hwang, H
- Date Issued
- 2014-06
- Publisher
- IOP PUBLISHING LTD
- Abstract
- As semiconductor devices are being increasingly scaled down, complex and high-aspect-ratio (AR) structures become necessary. The spin-on-glass (SOG) method has been considered to be effective for filling high-AR (>50) structures, because it enables low-cost fabrication and it has greater amenability to such structures. However, this method requires high temperatures (>600 degrees C) that can lead to degradation (i.e., oxidation) of adjoining active regions, and additional processes to restore these regions are necessary. We propose a low process temperature (similar to 400 degrees C) SOG method involving high-pressure annealing, for the filling of high-AR structures without the creation of voids. (C) 2014 The Japan Society of Applied Physics
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13565
- DOI
- 10.7567/JJAP.53.068007
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 53, no. 6, 2014-06
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