Role of oxidation on surface conductance of the topological insulator Bi2Te2Se
SCIE
SCOPUS
- Title
- Role of oxidation on surface conductance of the topological insulator Bi2Te2Se
- Authors
- Hwang, JH; Park, J; Kwon, S; Kim, JS; Park, JY
- Date Issued
- 2014-12
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We investigated the effect of surface oxides on charge transport properties in a topological insulator (Bi2Te2Se) using conductive probe atomic force microscopy in an ultrahigh vacuum environment. Uniform distribution of the measured friction and current were observed over a single quintuple layer terrace after exposure to the ambient environment, which is an indication of uniform surface oxide coverage. An oxide-free topological insulator surface was exposed using tip-induced etching. By comparing surface conduction on a fresh surface versus a surface exposed to air, we observed a minor change in resistance when surface oxide was present. The current density varied with applied load on the oxidized surface, which implies that the topological surface states respond to tip-induced pressure even though surface oxide is present. From these results, we conclude that surface oxidation in air has a negligible effect on surface conductance in topological insulators. (C) 2014 Elsevier B.V. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13553
- DOI
- 10.1016/J.SUSC.2014.08.005
- ISSN
- 0039-6028
- Article Type
- Article
- Citation
- SURFACE SCIENCE, vol. 630, page. 153 - 157, 2014-12
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