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Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds SCIE SCOPUS

Title
Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds
Authors
Kim, JJhi, SH
Date Issued
2015-05-21
Publisher
AMER INST PHYSICS
Abstract
The mechanism for the fast switching between amorphous, metastable, and crystalline structures in chalcogenide phase-change materials has been a long-standing puzzle. Based on first-principles calculations, we study the atomic and electronic properties of metastable Ge2Sb2Te5 and investigate the atomic disorder to understand the transition between crystalline hexagonal and cubic structures. In addition, we study the topological insulating property embedded in these compounds and its evolution upon structural changes and atomic disorder. We also discuss the role of the surface-like states arising from the topological insulating property in the metal-insulator transition observed in the hexagonal structure. (C) 2015 AIP Publishing LLC.
Keywords
PHASE-CHANGE MATERIALS; AUGMENTED-WAVE METHOD; ELECTRON-DIFFRACTION; CRYSTAL-STRUCTURES; DATA-STORAGE; GE2SB2TE5; MEMORY; FILMS
URI
https://oasis.postech.ac.kr/handle/2014.oak/13462
DOI
10.1063/1.4921294
ISSN
0021-8979
Article Type
Article
Citation
JOURNAL OF APPLIED PHYSICS, vol. 117, no. 19, page. 195701, 2015-05-21
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