High performance foldable polymer thin film transistors with a side gate architecture
SCIE
SCOPUS
- Title
- High performance foldable polymer thin film transistors with a side gate architecture
- Authors
- Lee, SW; Kim, BS; Park, JJ; Hur, JH; Kim, JM; Sekitani, T; Someya, T; Jeong, U
- Date Issued
- 2011-09
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- Foldable polymer thin film transistors gated by an ion gel dielectric were fabricated on a polymer substrate. Side gate structure was employed to simplify the fabrication process, which is a unique advantage of the transistors based on the ion gel dielectric. Utilizing the diffusion of crosslinkable oligomers in the P3HT thin films followed by UV gelation through a patterned mask, the ion gel made a strong bonding to the P3HT layer. Due to the deformable nature of the ion gel dielectric, the transistor arrays were electrically and mechanically stable at repeated folding events.
- Keywords
- ORGANIC TRANSISTORS; ELASTIC CONDUCTORS; ELECTRONICS; SEMICONDUCTOR; CONDUCTIVITY; DIELECTRICS; NANOFIBERS; CIRCUITS; DENSITY; CHANNEL
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13447
- DOI
- 10.1039/C1JM13079J
- ISSN
- 0959-9428
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, vol. 21, no. 46, page. 18804 - 18809, 2011-09
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