A simple and rapid formation of wet chemical etched silicon nanowire films at the air–water interface
SCIE
SCOPUS
- Title
- A simple and rapid formation of wet chemical etched silicon nanowire films at the air–water interface
- Authors
- Lee, TI; Choi, WJ; Moon, KJ; Choi, JH; Park, JH; Jeong, U; Baik, HK; Myoung, JM
- Date Issued
- 2011-06
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- A spontaneous assembly route to form a thin film of nanowires (NWs) was demonstrated and its feasibility was confirmed through the fabrication of a high-performance multi-Si NW field effect transistor (FET) using this route. Governed by the three mechanisms of spreading, trapping, and two-dimensional packing, the route was optimized for the concentration of Si NWs and the initial volume ratio of aqueous hydrochloride solution to isopropyl alcohol. The successfully formed Si NW thin-film was transferred on a flat polydimethylsiloxane (PDMS) mold and regulated using a repeatable conformal contact method with a new flat PDMS to prepare it for decal printing on an organic dielectric layer. Finally, after depositing the source and drain electrodes on the printed active layer, a high-performance 23-bridged Si NW FET exhibiting a mu(eff) of 51.4 cm(2) V-1 s(-1), an on/off drain current ratio of 10(5), and a V-th of 2.7 V was obtained.
- Keywords
- SEMICONDUCTOR NANOWIRES; CARBON NANOTUBES; CHEMISTRY; GROWTH; ZNO
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13446
- DOI
- 10.1039/C1JM12167G
- ISSN
- 0959-9428
- Article Type
- Article
- Citation
- Journal of Materials Chemistry, vol. 21, no. 37, page. 14203 - 14208, 2011-06
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