Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric
SCIE
SCOPUS
- Title
- Random network transistor arrays of embedded ZnO nanorods in ion-gel gate dielectric
- Authors
- Choi, JH; Lee, SW; Kar, JP; Das, SN; Jeon, J; Moon, KJ; Il Lee, T; Jeong, U; Myoung, JM
- Date Issued
- 2010-06
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- We suggested a facile route to fabricate top-gate random network devices of ZnO nanorods (NRs) embedded in an ion-gel dielectric layer. This route can be used for large-scale integration of ZnO NR networks. The transistors showed very good performances with low operational voltages, high field-effect mobility (similar to 1.63 cm(2) V(-1) s(-1)), and a greatly enhanced on/off ratio (similar to 10(4)). The ion-gel dielectric provided strong electrostatic doping in ZnO NRs that led to ohmic contact between ZnO and the Au electrode. A high-performance (gain similar to 12) complementary inverter was demonstrated by integrating an n-type ZnO NR network device and a p-type device based on electrospun poly(3-hexylthiophene) (P3HT) nanofibers.
- Keywords
- FIELD-EFFECT TRANSISTORS; POLYMER; NANOWIRES; LOGIC
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/13445
- DOI
- 10.1039/C0JM01313G
- ISSN
- 0959-9428
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, vol. 20, no. 35, page. 7393 - 7397, 2010-06
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.