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Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

Title
Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission
Authors
Kim, DYPark, JH김종규Kim, JKSchubert, EFSone, CKim, JOh, SJHwang, SLee, JW
Date Issued
Apr-2015
Publisher
CHINESE ACAD SCIENCES, CHANGCHUN INST OPTICS FINE MECHANICS
Abstract
While the demand for deep ultraviolet (DUV) light sources is rapidly growing, the efficiency of current AlGaN-based DUV light-emitting diodes (LEDs) remains very low due to their fundamentally limited light-extraction efficiency (LEE), calling for a novel LEE-enhancing approach to deliver a real breakthrough. Here, we propose sidewall emission-enhanced (SEE) DUV LEDs having multiple light-emitting mesa stripes to utilize inherently strong transverse-magnetic polarized light from the AlGaN active region and three-dimensional reflectors between the stripes. The SEE DUV LEDs show much enhanced light output power with a strongly upward-directed emission due to the exposed sidewall of the active region and Al-coated selective-area-grown n-type GaN micro-reflectors. The devices also show reduced operating voltage due to better n-type ohmic contact formed on the regrown n-GaN stripes when compared with conventional LEDs. Accordingly, the proposed approach simultaneously improves optical and electrical properties. In addition, strategies to further enhance the LEE up to the theoretical optimum value and control emission directionality are discussed.
Keywords
light-emitting diodes; light-extraction efficiency; GROWTH; deep ultraviolet; VAPOR-PHASE EPITAXY; UV LEDS; ALGAN; GAN; SAPPHIRE
URI
http://oasis.postech.ac.kr/handle/2014.oak/13170
DOI
10.1038/LSA.2015.36
ISSN
2047-7538
Article Type
ARTICLE
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